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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB507
DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg
Collector-base voltage

PARAMETER
Collector-emitter voltage
INCH
Base current
Emitter-base voltage
Collector current (DC)
ANG
SEM E
Open base
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE -60 -60 -5 -3 -6 -1
UNIT V V V A A A W ae ae
Open collector
Collector current-Peak
Collector dissipation Junction temperature Storage temperature
TC=25ae
30 150 -50~150
THERMAL CHARACTERISTICS
SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; IB=0 IC=-2A; IB=-0.2A IC=-1A ; VCE=-2V VCB=-60V; IE=0 VCE=-60V; IB=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-5V 40 40 MIN -60 TYP.
2SB507
SYMBOL VCEO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT
MAX
UNIT V
-1.0 -1.5 -0.1 -5.0 -1.0 320
V V mA mA mA
hFE-1 Classifications C 40-80 D
Transition frequency
ANG CH
E F 100-200
IN
60-120
160-320
EMIC ES
DUC ON
5
TOR
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB507
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.10mm)
3


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