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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INCH Base current Emitter-base voltage Collector current (DC) ANG SEM E Open base Open emitter OND IC CONDITIONS TOR UC VALUE -60 -60 -5 -3 -6 -1 UNIT V V V A A A W ae ae Open collector Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25ae 30 150 -50~150 THERMAL CHARACTERISTICS SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; IB=0 IC=-2A; IB=-0.2A IC=-1A ; VCE=-2V VCB=-60V; IE=0 VCE=-60V; IB=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-5V 40 40 MIN -60 TYP. 2SB507 SYMBOL VCEO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V -1.0 -1.5 -0.1 -5.0 -1.0 320 V V mA mA mA hFE-1 Classifications C 40-80 D Transition frequency ANG CH E F 100-200 IN 60-120 160-320 EMIC ES DUC ON 5 TOR MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB507 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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